Photon-activated charge domain in high-gain photoconductive switches
Chinese Optics Letters, Vol. 1, Issue 9, pp. 553-555 (2003)
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Abstract
We report our experimental observation of charge domain oscillation in semi-insulating GaAs photoconductive semiconductor switches (PCSSs). The high-gain PCSS is intrinsically a photon-activated charge domain device. It is the photon-activated carriers that satisfy the requirement of charge domain formation on carrier concentration and device length product of 10^(12) cm^(-2). We also show that, because of the repeated process of domain formation, the domain travels with a compromised speed of electron saturation velocity and the speed of light. As a result, the transit time of charge domains in PCSS is much shorter than that of traditional Gunn domains.
© 2005 Chinese Optics Letters
OCIS Codes
(320.5390) Ultrafast optics : Picosecond phenomena
(320.7080) Ultrafast optics : Ultrafast devices
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors
Citation
Wei Shi, Huiying Dai, and Xiaowei Sun, "Photon-activated charge domain in high-gain photoconductive switches," Chin. Opt. Lett. 1, 553-555 (2003)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-1-9-553
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