OSA's Digital Library

Chinese Optics Letters

Chinese Optics Letters


  • Vol. 10, Iss. 1 — Jan. 10, 2012
  • pp: 013102–

Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices

Jianwei Zhao, Fengjuan Liu, Jian Sun, Haiqin Huang, Zuofu Hu, and Xiqing Zhang  »View Author Affiliations

Chinese Optics Letters, Vol. 10, Issue 1, pp. 013102- (2012)

View Full Text Article

Acrobat PDF (319 KB)

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

  • Export Citation/Save Click for help


Ag/ZnO/Pt structure resistive switching devices are fabricated by radio frequency (RF) magnetron sputtering at room temperature. The memory devices exhibit stable and reversible resistive switching behavior. The ratio of high resistance state to low resistance state can reach as high as 102. The retention measurement indicates that the memory property of these devices can be maintained for a long time (over 104 s under 0.1-V durable stress). Moreover, the operation voltages are very low, -0.4 V (OFF state) and 0.8 V (ON state). A high-voltage forming process is not required in the initial state, and multi-step reset process is demonstrated. Resistive switching device with the Ag/ZnO/ITO structure is constructed for comparison with the Ag/ZnO/Pt device.

© 2012 Chinese Optics Letters

OCIS Codes
(310.0310) Thin films : Thin films

Jianwei Zhao, Fengjuan Liu, Jian Sun, Haiqin Huang, Zuofu Hu, and Xiqing Zhang, "Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices," Chin. Opt. Lett. 10, 013102- (2012)

Sort:  Author  |  Year  |  Journal  |  Reset


  1. G. I. Meijer, Science 319, 1625 (2008).
  2. R. Waser and M. Aono, Nat. Mater. 6, 833 (2007).
  3. M. Janousch, G. I. Meijer, U. Staub, B. Delley, S. F. Karg, and B. P. Andreasson, Adv. Mater. 19, 2232 (2007).
  4. H. Guo, L. Gao, Y. Xia, K. Jiang, B. Xu, Z. Liu, and J. Yin, Appl. Phys. Lett. 94, 153504 (2009).
  5. W. L. Kwan, B. Lei, Y. Shao, and Y. Yang, Curr. Appl. Phys. 10, e50 (2010).
  6. W. Guan, S. Long, Q. Liu, M. Liu, and W. Wang, IEEE Electron Device Lett. 29, 434 (2008).
  7. J. W. Seo, J.-W. Park, K. S. Lim, J.-H. Yang, and S. J. Kang, Appl. Phys. Lett. 93, 223505 (2008).
  8. K. Zheng, C. Xu, H. Zhou, M. Zhao, G. Zhu, Y. Cui, and X. Li, Chin. Opt. Lett. 7, 238 (2009).
  9. M. Zhao, G. Hu, H. Zhou, K. Zheng, G. Zhu, Y. Cui, and C. Xu, Chin. Opt. Lett. 7, 235 (2009).
  10. C. K¨ugeler, R. Weng, H. Schroeder, R. Symanczyk, P. Majewski, K.-D. Ufert, R. Waser, and M. Kund, Thin Solid Films 518, 2258 (2010).
  11. S. H. Chang, J. S. Lee, S. C. Chae, S. B. Lee, C. Liu, B. Kahng, D.-W. Kim, and T. W. Noh, Phys. Rev. Lett. 102, 026801 (2009).
  12. Y. H. Do, J. S. Kwak, Y. C. Bae, K. Jung, H. Im, and J. P. Hong, Thin Solid Films 518, 4408 (2010).
  13. W. Zhu, T. P. Chen, Z. Liu, M. Yang, Y. Liu, and S. Fung, J. Appl. Phys. 106, 093706 (2009).
  14. W.-Y. Chang, Y.-C. Lai, T.-B. Wu, S.-F. Wang, F. Chen, and M.-J. Tsai, Appl. Phys. Lett. 92, 022110 (2008).
  15. C.-Y. Lin, C.-Y. Wu, C.-Y. Wu, and T.-Y. Tseng, J. Appl. Phys. 102, 094101 (2007).
  16. J. Y. Son and Y. H. Shin, Appl. Phys. Lett. 92, 222106 (2008).
  17. N. Xu, L. Liu, X. Sun, C. Chen, Y. Wang, D. Han, X. Liu, R. Han, J. Kang, and B. Yu, Semicond. Sci. Technol. 23, 075019 (2008).
  18. N. Xu, L. Liu, X. Sun, X. Liu, D. Han, Y. Wang, R. Han, J. Kang, and B. Yu, Appl. Phys. Lett. 92, 232112 (2008).
  19. J.-H. Choi, S. N. Das, and J.-M. Myounga, Appl. Phys. Lett. 95, 062105 (2009).
  20. Z. Ji, Q. Maoa, and W. Ke, Solid State Commun. 150, 1919 (2010).
  21. Y. Yang, F. Pan, F. Zeng, and M. Liu, J. Appl. Phys. 106, 123705 (2009).
  22. Y. Yang, F. Pan, Q. Liu, M. Liu, and F. Zeng, Nano Lett. 9, 1636 (2009).
  23. B. Sun, Y. Liu, L. Liu, N. Xu, Y. Wang, X. Liu, R. Han, and J. Kang, J. Appl. Phys. 105, 061630 (2009).
  24. X. Wu, P. Zhou, J. Li, L. Chen, H. Lv, Y. Lin, and T. Tang, Appl. Phys. Lett. 90, 183507 (2007).
  25. Z. Wang, P. B. Griffin, J. M. Vittie, S. Wong, P. C. McIntyre, and Y. Nishi, IEEE Electron Device Lett. 28, 14 (2007).
  26. S. Zhang, S. Long, W. Guan, Q. Liu, Q. Wang, and M. Liu, J. Phys. D 42, 055112 (2009).

Cited By

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited