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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 10, Iss. 1 — Jan. 10, 2012
  • pp: 013102–

Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices

Jianwei Zhao, Fengjuan Liu, Jian Sun, Haiqin Huang, Zuofu Hu, and Xiqing Zhang  »View Author Affiliations


Chinese Optics Letters, Vol. 10, Issue 1, pp. 013102- (2012)


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Abstract

Ag/ZnO/Pt structure resistive switching devices are fabricated by radio frequency (RF) magnetron sputtering at room temperature. The memory devices exhibit stable and reversible resistive switching behavior. The ratio of high resistance state to low resistance state can reach as high as 102. The retention measurement indicates that the memory property of these devices can be maintained for a long time (over 104 s under 0.1-V durable stress). Moreover, the operation voltages are very low, -0.4 V (OFF state) and 0.8 V (ON state). A high-voltage forming process is not required in the initial state, and multi-step reset process is demonstrated. Resistive switching device with the Ag/ZnO/ITO structure is constructed for comparison with the Ag/ZnO/Pt device.

© 2012 Chinese Optics Letters

OCIS Codes
(310.0310) Thin films : Thin films

Citation
Jianwei Zhao, Fengjuan Liu, Jian Sun, Haiqin Huang, Zuofu Hu, and Xiqing Zhang, "Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices," Chin. Opt. Lett. 10, 013102- (2012)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-10-1-013102

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