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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Editor: Zhizhan Xu
  • Vol. 10, Iss. 11 — Nov. 1, 2012
  • pp: 110401–110401

Research on surface photovoltage spectroscopy for GaAs photocathodes with AlxGa1?xAs buf fer layer

Shuqin Zhang, Liang Chen, and Songlin Zhuang  »View Author Affiliations


Chinese Optics Letters, Vol. 10, Issue 11, pp. 110401-110401 (2012)


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Abstract

Surface photovoltage spectroscopy equations for cathode materials with an AlxGa1?xAs buffer layer are determined in order to effectively measure the body parameters for transmission-mode (t-mode) photocathode materials before Cs-O activation. Body parameters of cathode materials are well fitted through experiments and fitting calculations for the designed AlxGa1?xAs/GaAs structure material. This investigation examines photo-excited performance and measurements of body parameters for t-mode cathode materials of different doping structures. It also helps study various doping structures and optimize structure designs in the future.

© 2012 Chinese Optics Letters

OCIS Codes
(040.7190) Detectors : Ultraviolet
(160.1890) Materials : Detector materials
(230.0040) Optical devices : Detectors
(260.7210) Physical optics : Ultraviolet, vacuum

ToC Category:
Detectors

Citation
Shuqin Zhang, Liang Chen, and Songlin Zhuang, "Research on surface photovoltage spectroscopy for GaAs photocathodes with AlxGa1?xAs buf fer layer," Chin. Opt. Lett. 10, 110401-110401 (2012)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-10-11-110401


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