Research on surface photovoltage spectroscopy for GaAs photocathodes with AlxGa1?xAs buf fer layer
Chinese Optics Letters, Vol. 10, Issue 11, pp. 110401-110401 (2012)
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Abstract
Surface photovoltage spectroscopy equations for cathode materials with an AlxGa1?xAs buffer layer are determined in order to effectively measure the body parameters for transmission-mode (t-mode) photocathode materials before Cs-O activation. Body parameters of cathode materials are well fitted through experiments and fitting calculations for the designed AlxGa1?xAs/GaAs structure material. This investigation examines photo-excited performance and measurements of body parameters for t-mode cathode materials of different doping structures. It also helps study various doping structures and optimize structure designs in the future.
© 2012 Chinese Optics Letters
OCIS Codes
(040.7190) Detectors : Ultraviolet
(160.1890) Materials : Detector materials
(230.0040) Optical devices : Detectors
(260.7210) Physical optics : Ultraviolet, vacuum
ToC Category:
Detectors
Citation
Shuqin Zhang, Liang Chen, and Songlin Zhuang, "Research on surface photovoltage spectroscopy for GaAs photocathodes with AlxGa1?xAs buf fer
layer," Chin. Opt. Lett. 10, 110401-110401 (2012)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-10-11-110401
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