OSA's Digital Library

Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Editor: Zhizhan Xu
  • Vol. 10, Iss. 5 — May. 1, 2012
  • pp: 051601–

First principle study of the influence of vacancy defects on optical properties of GaN

Yujie Du, Benkang Chang, Honggang Wang, Junju Zhang, and Meishan Wang  »View Author Affiliations


Chinese Optics Letters, Vol. 10, Issue 5, pp. 051601- (2012)


View Full Text Article

Acrobat PDF (865 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations
  • Export Citation/Save Click for help

Abstract

We employ plane-wave with ultrasoft pseudopotential method to calculate and compare the total density of states and partial density of states of bulk-phase GaN, Ga0:9375N, and GaN0:9375 systems based on the first-principle density-functional theory (DFT). For Ga and N vacancies, the electronic structures of their neighbor and next-neighbor atoms change partially. The Ga0:9375N system has n-type semiconductor conductive properties, whereas the GaN0:9375 system has p-type semiconductor conductive properties. By studying the optical properties, the influence of Ga and N vacancy defects on the optical properties of GaN has been shown as mainly in the low-energy area and very weak in high-energy area. The dielectric peak influenced by vacancy defects expands to the visible light area, which greatly increases the electronic transition in visible light area.

© 2012 Chinese Optics Letters

OCIS Codes
(160.4760) Materials : Optical properties
(250.1500) Optoelectronics : Cathodoluminescence
(300.6170) Spectroscopy : Spectra

ToC Category:
Materials

Citation
Yujie Du, Benkang Chang, Honggang Wang, Junju Zhang, and Meishan Wang, "First principle study of the influence of vacancy defects on optical properties of GaN," Chin. Opt. Lett. 10, 051601- (2012)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-10-5-051601


Sort:  Author  |  Year  |  Journal  |  Reset

References

  1. Y. Li, H. Pan, and P. Xu, Acta Phys. Sin. 54, 317 (2005).
  2. A. Hass Bar-Ilan, S. Zamir, O. Katz, B. Meyler, and J. Salzman, Mater, Sci. Eng. A 302, 14 (2001).
  3. H. Zhao, G. Liu, and N. Tansu, Appl. Phys. Lett. 97, 131114 (2010).
  4. W. W. Chow, Opt. Express 19, 21818 (2011).
  5. R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, Appl. Phys. Lett. 96, 231113 (2010).
  6. J. Zhang, H. Zhao, and N. Tansu, Appl. Phys. Lett. 98, 171111 (2011).
  7. X. Wang, B. Chang, Y. Du, and J. Qiao, Appl. Phys. Lett. 99, 042102 (2011).
  8. X. Wang, B. Chang, L. Ren, and P. Gao, Appl. Phys. Lett. 98, 082109 (2011).
  9. H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, Opt. Express 19, A991 (2011).
  10. J. Zhang, H. Tong, G. Liu, J. A. Herbsommer, G. Huang, and N. Tansu, J. Appl. Phys. 109, 053706 (2011).
  11. C. Li, S. Dang, and P. Han, Acta Opt. Sin. (in Chinese) 30, 1406 (2010).
  12. J. Li, X. Zeng, Z. Ji, Y. Hu, B. Chen, and Y. Fan, Acta Phys. Sin. 60, 057101 (2011).
  13. Y. Shen and J. Kang, Acta Phys. Sin. 51, 645 (2002).
  14. C. Pang, J. Shi, Y. Zhang, K. S. A. Butcher, T. L. Tansley, J. E. Downes, and J. Shang, Chin. Phys. Lett. 24, 2048 (2007).
  15. W. Jie and C. Yang, Journal of Sichuan Normal University (Natural Science) 33, 803 (2010).
  16. M. D. Segall, P. J. D. Lindan, M. J. Probert, C. J. Pickard, P. J. Hasnip, S. J. Clark, and M. C. Payne, J. Phys.: Condens. Matter 14, 2717 (2002).
  17. J. P. Perdew and A. Zunger, Phys. Rev. B 23, 5048 (1981).
  18. J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996).
  19. H. J. Monkhorst and J. D. Pack, Phys. Rev. B 13, 5188 (1976).
  20. R. Fang, Spectroscopy of solid (in Chinese) (China University of Science and Technology Press, Hefei, 2001).
  21. X. Sheng, The Spectrum and Optical Property of Semiconductor (in Chinese) (Science Press, Beijing, 2002).
  22. Q. Chen, Q. Xie, and W. Yan, Science in China (Series G) 38, 825 (2008).
  23. P. Perlin, C. Jauberthie-Carillon, J. P. Itie, A. San Miguel, I. Grzegory, and A. Polian, Phys. Rev. B 45, 83 (1992).
  24. J. Guo, G. Zheng, K. He, and J. Chen, Acta Phys. Sin. 57, 3740 (2008).
  25. F. Ke, X. Fu, G. Duan, S. Wu, S. Wang, L. Chen, and Y. Jia, J. Infrared Millim. Waves 30, 212 (2011).
  26. T. Kawashima, H. Yoshikawa, S. Adachi, S. Fuke, and K. Ohtsuka, J. Appl. Phys. 82, 3528 (1997).

Cited By

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited