Large spot size and low-divergence angle operation of 917-nm edge-emitting semiconductor laser with an asymmetric waveguide structure
Chinese Optics Letters, Vol. 10, Issue 6, pp. 061401- (2012)
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Abstract
GaInAs/AlGaAs comprehensive-strained three-quantum-well lasers with asymmetric waveguide are designed and optimized. With this design, the optical field in the transverse direction is extended, and a semiconductor laser with large spot is obtained. For a 300-μm cavity length and 100-μm aperture device under continuous wave (CW) operation, the measured vertical and horizontal far-field divergence angles are 12.2° and 3.0°, respectively. The slope efficiency is 0.44 W/A and the lasing wavelength is 917 nm. The equivalent transverse spot size is 3 \mu m for the fundamental transverse mode, which is a sufficiently large value for the purpose of coupling and manipulation of light.
© 2012 Chinese Optics Letters
OCIS Codes
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.5960) Lasers and laser optics : Semiconductor lasers
ToC Category:
Lasers and Laser Optics
Citation
Jianxin Zhang, Lei Liu, Wei Chen, Anjin Liu, Wenjun Zhou, and Wanhua Zheng, "Large spot size and low-divergence angle operation of 917-nm edge-emitting
semiconductor laser with an asymmetric waveguide structure," Chin. Opt. Lett. 10, 061401- (2012)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-10-6-061401
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