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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Editor: Zhizhan Xu
  • Vol. 10, Iss. 6 — Jun. 10, 2012
  • pp: 061401–

Large spot size and low-divergence angle operation of 917-nm edge-emitting semiconductor laser with an asymmetric waveguide structure

Jianxin Zhang, Lei Liu, Wei Chen, Anjin Liu, Wenjun Zhou, and Wanhua Zheng  »View Author Affiliations


Chinese Optics Letters, Vol. 10, Issue 6, pp. 061401- (2012)


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Abstract

GaInAs/AlGaAs comprehensive-strained three-quantum-well lasers with asymmetric waveguide are designed and optimized. With this design, the optical field in the transverse direction is extended, and a semiconductor laser with large spot is obtained. For a 300-μm cavity length and 100-μm aperture device under continuous wave (CW) operation, the measured vertical and horizontal far-field divergence angles are 12.2° and 3.0°, respectively. The slope efficiency is 0.44 W/A and the lasing wavelength is 917 nm. The equivalent transverse spot size is 3 \mu m for the fundamental transverse mode, which is a sufficiently large value for the purpose of coupling and manipulation of light.

© 2012 Chinese Optics Letters

OCIS Codes
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.5960) Lasers and laser optics : Semiconductor lasers

ToC Category:
Lasers and Laser Optics

Citation
Jianxin Zhang, Lei Liu, Wei Chen, Anjin Liu, Wenjun Zhou, and Wanhua Zheng, "Large spot size and low-divergence angle operation of 917-nm edge-emitting semiconductor laser with an asymmetric waveguide structure," Chin. Opt. Lett. 10, 061401- (2012)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-10-6-061401


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