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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Editor: Zhizhan Xu
  • Vol. 10, Iss. 6 — Jun. 10, 2012
  • pp: 062302–

Investigation of GaN-based dual-wavelength light-emitting diodes with p-type barriers and vertically stacked quantum wells

Jun Chen, Guanghan Fan, Wei Pang, Shuwen Zheng, and Yunyan Zhang  »View Author Affiliations


Chinese Optics Letters, Vol. 10, Issue 6, pp. 062302- (2012)


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Abstract

Designs of p-doped in quantum well (QW) barriers and specific number of vertically stacked QWs are proposed to improve the optical performance of GaN-based dual-wavelength light-emitting diodes (LEDs). Emission spectra, carrier concentration, electron current density, and internal quantum efficiency (IQE) are studied numerically. Simulation results show that the efficiency droop and the spectrum intensity at the large current injection are improved markedly by using the proposed design. Compared with the conventional LEDs, the uniform spectrum intensity of dual-wavelength luminescence is realized when a specific number of vertically stacked QWs is adopted. Suppression of electron leakage current and the promotion of hole injection efficiency could be one of the main reasons for these improvements.

© 2012 Chinese Optics Letters

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(260.5430) Physical optics : Polarization
(300.6170) Spectroscopy : Spectra

ToC Category:
Optical Devices

Citation
Jun Chen, Guanghan Fan, Wei Pang, Shuwen Zheng, and Yunyan Zhang, "Investigation of GaN-based dual-wavelength light-emitting diodes with p-type barriers and vertically stacked quantum wells," Chin. Opt. Lett. 10, 062302- (2012)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-10-6-062302


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