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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Editor: Zhizhan Xu
  • Vol. 10, Iss. 8 — Aug. 1, 2012
  • pp: 082301–

Experimentally distinguishing electro-optic ef fects in silicon

Jingcheng Zhu, Zhanguo Chen, Xiuhuan Liu, Jinbo Mu, Yanjun Gao, Wei Han, and Gang Jia  »View Author Affiliations


Chinese Optics Letters, Vol. 10, Issue 8, pp. 082301- (2012)


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Abstract

Different electro-optic effects, such as Kerr effect, Pockels effect induced by the electric field or strain, and plasma dispersion effect exist in silicon. Experimentally distinguishing these effects is necessary for designing silicon-based electro-optic devices. According to their different polarization dependencies and frequency responses, these effects are measured and distinguished successfully via a transverse electro-optic modulation experiment based on the near-intrinsic silicon sample. The results indicate that Pockels effect induced by the electric field or strain is primary among these effects in the near-intrinsic silicon sample.

© 2012 Chinese Optics Letters

OCIS Codes
(190.3270) Nonlinear optics : Kerr effect
(230.2090) Optical devices : Electro-optical devices
(260.1440) Physical optics : Birefringence

ToC Category:
Optical Devices

Citation
Jingcheng Zhu, Zhanguo Chen, Xiuhuan Liu, Jinbo Mu, Yanjun Gao, Wei Han, and Gang Jia, "Experimentally distinguishing electro-optic ef fects in silicon," Chin. Opt. Lett. 10, 082301- (2012)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-10-8-082301

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