Different electro-optic effects, such as Kerr effect, Pockels effect induced by the electric field or strain, and plasma dispersion effect exist in silicon. Experimentally distinguishing these effects is necessary for designing silicon-based electro-optic devices. According to their different polarization dependencies and frequency responses, these effects are measured and distinguished successfully via a transverse electro-optic modulation experiment based on the near-intrinsic silicon sample. The results indicate that Pockels effect induced by the electric field or strain is primary among these effects in the near-intrinsic silicon sample.
© 2012 Chinese Optics Letters
Jingcheng Zhu, Zhanguo Chen, Xiuhuan Liu, Jinbo Mu, Yanjun Gao, Wei Han, and Gang Jia, "Experimentally distinguishing electro-optic ef fects in silicon," Chin. Opt. Lett. 10, 082301- (2012)