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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Editor: Zhizhan Xu
  • Vol. 11, Iss. 11 — Nov. 1, 2013
  • pp: 111601–

Stable field emission ofion-sputtering-induced Si nanocone arrays

Shaolin Xue, Shuxian Wu, Ying Qiu, and Ming Lu  »View Author Affiliations


Chinese Optics Letters, Vol. 11, Issue 11, pp. 111601- (2013)


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Abstract

Silicon nanocone arrays with metal silicide (Fe and Cr)-enriched apexes are fabricated on Si (100) substrate by the Ar+ ion bombardment method. The nanocone arrays show excellent field emission properties. A high current density (J) of ~0.33 mA/cm2 under a field of ~3 V/\mu m, a very low turn-on field of ~1.4 V/\mu m, and a very large enhancement factor of ~9466 are also obtained. The emission J of Si nanocone arrays remains extremely stable for long periods of time (24 h).

© 2013 Chinese Optics Letters

OCIS Codes
(160.2100) Materials : Electro-optical materials
(160.4236) Materials : Nanomaterials

ToC Category:
Materials

Citation
Shaolin Xue, Shuxian Wu, Ying Qiu, and Ming Lu, "Stable field emission ofion-sputtering-induced Si nanocone arrays," Chin. Opt. Lett. 11, 111601- (2013)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-11-11-111601


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