The nonlinear photoresponse to a 1.56-\mu m infrared continuous wave laser in semi-insulating (SI) galliumarsenide (GaAs) is examined. The double-frequency absorption (DFA) is responsible for the nonlinear photoresponse based on the quadratic dependence of the photocurrent separately on the coupled optical power and bias voltage. The electric field-induced DFA remarkably affects the native DFA in SI GaAs. The surface electric field or the surface band-bending of SI GaAs significantly affects the magnitude variation of the photocurrent and dark current.
© 2013 Chinese Optics Letters
(190.4350) Nonlinear optics : Nonlinear optics at surfaces
(190.4400) Nonlinear optics : Nonlinear optics, materials
(250.0040) Optoelectronics : Detectors
(250.4390) Optoelectronics : Nonlinear optics, integrated optics
Xiuhuan Liu, Yi Li, Zhanguo Chen, Mingli Li, Gang Jia, Yanjun Gao, Lixin Hou, Shuang Feng, Xinlu Li, and Qi Wang, "Quadratic nonlinear response to 1.56-\mu m continuous wave laser in semi-insulating GaAs," Chin. Opt. Lett. 11, 112501- (2013)