Selective area growth (SAG) is performed to fabricate monolithically integrated distributed feedback (DFB) laser array by adjusting the width of a SiO2 mask. A strain-compensated-barrier structure is adopted to reduce the accumulated strain and improve the quality of multi-quantum well materials. Varying the strip width of the SAG masks, the DFB laser array with an average channel spacing of 1.47 nm is demonstrated by a conventional holographic method with constant-pitch grating. The threshold current from 14 to 18 mA and over 35-dB side mode suppression ratio (SMSR) are obtained for all DFB lasers in the array.
© 2013 Chinese Optics Letters
(140.2010) Lasers and laser optics : Diode laser arrays
(140.3570) Lasers and laser optics : Lasers, single-mode
(250.5300) Optoelectronics : Photonic integrated circuits
(250.5960) Optoelectronics : Semiconductor lasers
Lasers and Laser Optics
Can Zhang, Song Liang, Li Ma, Liangshun Han, and Hongliang Zhu, "Multi-channel DFB laser array fabricated by SAG with optimized epitaxy conditions," Chin. Opt. Lett. 11, 041401- (2013)