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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Editor: Zhizhan Xu
  • Vol. 11, Iss. 4 — Apr. 1, 2013
  • pp: 041601–

Nanocrystal-enhanced near-IR emission in the bismuth-doped chalcogenide glasses

Yinsheng Xu, Jiani Qi, Changgui Lin, Peiqing Zhang, and Shixun Dai  »View Author Affiliations


Chinese Optics Letters, Vol. 11, Issue 4, pp. 041601- (2013)


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Abstract

Bismuth (Bi)-doped materials have attracted a great deal of attention because of their broadband nearinfrared (near-IR) emission around the wavelength utilized in telecommunications. In this study, broad near-IR emission band from 1 100 to 1 650 nm is generated in the Bi-doped 90GeS2-10Ga2S3 glass and glass-ceramics under 820 nm of light excitation. Based on the analysis of the absorption and emission spectra, the origin of this broadband emission is ascribed to the Bi2-2 dimers. The precipitation of \β-GeS2 nanocrystals drastically enhances the emission intensity and lifetime of Bi-doped chalcogenide glass.

© 2013 Chinese Optics Letters

OCIS Codes
(160.2540) Materials : Fluorescent and luminescent materials
(160.2750) Materials : Glass and other amorphous materials
(300.2140) Spectroscopy : Emission

ToC Category:
Materials

Citation
Yinsheng Xu, Jiani Qi, Changgui Lin, Peiqing Zhang, and Shixun Dai, "Nanocrystal-enhanced near-IR emission in the bismuth-doped chalcogenide glasses," Chin. Opt. Lett. 11, 041601- (2013)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-11-4-041601


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