We demonstrate an InP/InGaAs PIN photodetector with enhanced quantum efficiency by assembling silicon resonant waveguide gratings for the application of polarization sensitive systems. The measured results show that quantum efficiency of the photodetector with silicon resonant waveguide gratings can be increased by 31.6% compared with that without silicon resonant waveguide gratings at the wavelength range of 1500 to 1600 nm for TE-polarization.
© 2014 Chinese Optics Letters
Jinhua Hu, Yongqing Huang, Xiaomin Ren, Xiaofeng Duan, Yehong Li, and Yang Luo, "Realization of quantum efficiency enhanced PIN photodetector by assembling resonant waveguide grating," Chin. Opt. Lett. 12, 072301- (2014)