The third-order susceptibility of In_(x)Ga_(1-x)N/GaN quantum well (QW) has been investigated by taking into account the strain-induced piezoelectric (PZ) field, and the effective-mass Schrodinger equation is solved numerically. It is shown thatthe third-order susceptibility for third harmonic generation (THG) of In_(x)Ga_(1-x)N/GaN QW is related to indium content in QW and the intensity of the PZ field. The characteristics of \chi^(3)_(THG)(-3\omega, \omega, \omega, \omega) as the function of the wavelength of incident beam, well width and indium content, have been analyzed.
© 2005 Chinese Optics Letters
(190.2620) Nonlinear optics : Harmonic generation and mixing
(190.4400) Nonlinear optics : Nonlinear optics, materials
(190.5970) Nonlinear optics : Semiconductor nonlinear optics including MQW
(190.7110) Nonlinear optics : Ultrafast nonlinear optics
Yaochen Bai, Jingliang Liu, and Duanzheng Yao, "Dependence of third-order nonlinear susceptibility on strain induced piezoelectric field in In_(x)Ga_(1-x)N/GaN quantum well," Chin. Opt. Lett. 2, 50-52 (2004)