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Chinese Optics Letters

Chinese Optics Letters


  • Vol. 2, Iss. 1 — Jan. 10, 2004
  • pp: 50–52

Dependence of third-order nonlinear susceptibility on strain induced piezoelectric field in In_(x)Ga_(1-x)N/GaN quantum well

Yaochen Bai, Jingliang Liu, and Duanzheng Yao  »View Author Affiliations

Chinese Optics Letters, Vol. 2, Issue 1, pp. 50-52 (2004)

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The third-order susceptibility of In_(x)Ga_(1-x)N/GaN quantum well (QW) has been investigated by taking into account the strain-induced piezoelectric (PZ) field, and the effective-mass Schrodinger equation is solved numerically. It is shown thatthe third-order susceptibility for third harmonic generation (THG) of In_(x)Ga_(1-x)N/GaN QW is related to indium content in QW and the intensity of the PZ field. The characteristics of \chi^(3)_(THG)(-3\omega, \omega, \omega, \omega) as the function of the wavelength of incident beam, well width and indium content, have been analyzed.

© 2005 Chinese Optics Letters

OCIS Codes
(190.2620) Nonlinear optics : Harmonic generation and mixing
(190.4400) Nonlinear optics : Nonlinear optics, materials
(190.5970) Nonlinear optics : Semiconductor nonlinear optics including MQW
(190.7110) Nonlinear optics : Ultrafast nonlinear optics

Yaochen Bai, Jingliang Liu, and Duanzheng Yao, "Dependence of third-order nonlinear susceptibility on strain induced piezoelectric field in In_(x)Ga_(1-x)N/GaN quantum well," Chin. Opt. Lett. 2, 50-52 (2004)

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