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Chinese Optics Letters

Chinese Optics Letters


  • Vol. 2, Iss. 10 — Oct. 10, 2004
  • pp: 611–614

Static recording characteristics of new type super-resolution near-field structure

Feng Zhang, Wendong Xu, Yang Wang, Jinsong Wei, Fei Zhou, Xiumin Gao, and Fuxi Gan  »View Author Affiliations

Chinese Optics Letters, Vol. 2, Issue 10, pp. 611-614 (2004)

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A novel super-resolution near-field optical structure (super-RENS) with bismuth (Bi) mask layer is proposed in this paper. Static optical recording tests with and without super-RENS are carried out using a 650-nm semiconductor laser at recording powers of 14 and 7 mW with pulse duration of 100 ns. The recording marks are observed by high-resolution optical microscopy with a charge-coupled device (CCD) camera. The results show that the Bi mask layer can also concentrate energy into the center of a laser beam at low laser power similar to the traditional Sb mask layer. The results above are further confirmed by another Ar+ laser system. The third-order nonlinear response induced by the plasma oscillation at the Bi/SiN interface during laser irradiation can be used to explain the phenomenon. The calculation results are basically consistent with our experimental results.

© 2005 Chinese Optics Letters

OCIS Codes
(160.4330) Materials : Nonlinear optical materials
(210.0210) Optical data storage : Optical data storage
(310.0310) Thin films : Thin films

Feng Zhang, Wendong Xu, Yang Wang, Jinsong Wei, Fei Zhou, Xiumin Gao, and Fuxi Gan, "Static recording characteristics of new type super-resolution near-field structure," Chin. Opt. Lett. 2, 611-614 (2004)

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