High power AlGaInP laser diodes with zinc-diffused window mirror structure
Chinese Optics Letters, Vol. 2, Issue 11, pp. 647-649 (2004)
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Abstract
The technology of zinc-diffusion to improve catastrophic optical damage (COD) threshold of compressively strained GaInP/AlGaInP quantum well laser diodes has been introduced. After zinc-diffusion, about 20-?m-long region at each facet of laser diode has been formed to serve as the window of the lasing light. As a result, the COD threshold has been significantly improved due to the enlargement of bandgap by the zinc-diffusion induced quantum well intermixing, compared with that of the conventional non-window structure. 40-mW continuous wave output power with the fundamental transverse mode has been realized under room temperature for the 3.5-?m-wide ridge waveguide diode. The operation current is 84 mA and the slope efficiency is 0.74 W/A at 40 mW. The lasing wavelength is 656 nm.
© 2005 Chinese Optics Letters
OCIS Codes
(140.3570) Lasers and laser optics : Lasers, single-mode
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.7300) Lasers and laser optics : Visible lasers
Citation
Yun Xu, Qing Cao, Xiaopeng Zhu, Guohua Yang, Qiaoqiang Gan, Guofeng Song, Liang Guo, Yuzhang Li, and Lianghui Chen, "High power AlGaInP laser diodes with zinc-diffused window mirror structure," Chin. Opt. Lett. 2, 647-649 (2004)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-2-11-647
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