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Chinese Optics Letters

Chinese Optics Letters


  • Vol. 2, Iss. 3 — Mar. 10, 2004
  • pp: 171–173

Efficient visible electroluminescence from porous silicon diodes with low driven voltage

Hongjian Li, Baiyun Huang, Danqing Yi, Haoyang Cui, Yingxuan He, and Jingcui Peng  »View Author Affiliations

Chinese Optics Letters, Vol. 2, Issue 3, pp. 171-173 (2004)

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By using n-butylamine as carbon resource, diamond-like carbon film (DLCF) was deposited on the p-n porous silicon (PS) surface by means of a radio-frequency glow discharge plasma system. Electroluminescent (EL) spectra show that EL intensity of the passivated PS diodes increases by 4.5 times and 30-nm blue-shift of EL peak occurs compared with the diodes without treatment and both of them are stable while the passivated diodes are exposed to the air indoor. The current-voltage (I-V) characteristics exhibit that the passivated diodes have a smaller series resistance and a lower onset voltage. The EL intensity-voltage (I_(EL)-V) relations of the PS devices with different DLCF thicknesses show that only medium DLCF thickness is optimum. These experimental phenomena have been explained based on Raman spectra and IR spectra of the diamond-like carbon films and IR spectra of the passivated PS samples.

© 2005 Chinese Optics Letters

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(250.5230) Optoelectronics : Photoluminescence

Hongjian Li, Baiyun Huang, Danqing Yi, Haoyang Cui, Yingxuan He, and Jingcui Peng, "Efficient visible electroluminescence from porous silicon diodes with low driven voltage," Chin. Opt. Lett. 2, 171-173 (2004)

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