An improved butt coupling method is used to fabricate an electroabsorption modulator (EAM) monolithically integrated with a distributed feedback (DFB) laser. The obtained electroabsorption-modulated laser (EML) chip with the traditional shallow ridge exhibits very low threshold current of 12 mA, output power of more than 8 mW, and static extinction ratio of -7 dB at the applied bias voltage from 0.5 to -2.0 V.
© 2005 Chinese Optics Letters
(140.3490) Lasers and laser optics : Lasers, distributed-feedback
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(250.3140) Optoelectronics : Integrated optoelectronic circuits
(250.7360) Optoelectronics : Waveguide modulators
Baoxia Li, Xiaohua Hu, Hongliang Zhu, Baojun Wang, Lingjuan Zhao, and Wei Wang, "Integrated electroabsorption-modulated DFB laser by using an improved butt-joint method," Chin. Opt. Lett. 2, 226-228 (2004)