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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 2, Iss. 5 — May. 10, 2004
  • pp: 305–307

Study on absorbance and laser damage threshold of HfO2 films prepared by ion-assisted reaction deposition

Dawei Zhang, Shuhai Fan, Weidong Gao, Hongbo He, Yingjian Wang, Jianda Shao, Zhengxiu Fan, and Haojie Sun  »View Author Affiliations


Chinese Optics Letters, Vol. 2, Issue 5, pp. 305-307 (2004)


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Abstract

Using a new kind of EH1000 ion source, hafnium dioxide (HfO2) films are deposited with different deposition techniques and different conditions. The absorbance and the laser damage threshold of these films have been measured and studied. By comparing these characteristics, one can conclude that under right conditions, such as high partial pressure of oxygen and right kind of ion source, the ion-assisted reaction deposition can prepare HfO2 films with higher laser induced damage threshold.

© 2005 Chinese Optics Letters

OCIS Codes
(310.0310) Thin films : Thin films
(310.6870) Thin films : Thin films, other properties

Citation
Dawei Zhang, Shuhai Fan, Weidong Gao, Hongbo He, Yingjian Wang, Jianda Shao, Zhengxiu Fan, and Haojie Sun, "Study on absorbance and laser damage threshold of HfO2 films prepared by ion-assisted reaction deposition," Chin. Opt. Lett. 2, 305-307 (2004)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-2-5-305

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