A kind of novel broad-band superluminescent diodes (SLDs) using graded tensile-strained bulk InGaAs is developed. The graded tensile-strained bulk InGaAs is obtained by changing only group-III trimethyl-gallium source flow during low-pressure metal organic vapor-phase epitaxy. At the injection current of 200 mA, the fabricated SLDs with such structure demonstrate full-width at half-maximum spectral width of 106 nm and the output light power of 13.6 mW, respectively.
© 2005 Chinese Optics Letters
Shurong Wang, Hongliang Zhu, Zhihong Liu, Ruiying Zhang, Ying Ding, Lingjuan Zhao, Fan Zhou, Jing Bian, Lufeng Wang, and Wei Wang, "Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum," Chin. Opt. Lett. 2, 359-361 (2004)