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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 2, Iss. 8 — Aug. 10, 2004
  • pp: 489–492

An in situ growth method for property control of LPCVD polysilicon film

Hongbin Yu, Haiqinq Chen, Jun Li, and Chao Wang  »View Author Affiliations


Chinese Optics Letters, Vol. 2, Issue 8, pp. 489-492 (2004)


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Abstract

Polysilicon films deposited by low-pressure chemical vapor deposition (LPCVD) exhibit large residual stress and stress gradient, depending on the deposition condition. An in situ growth method based on multi-layer concept is presented to control the property for as-deposited polysilicon. A 3-?m-thick polysilicon film with nine layers structure is demonstrated under the detailed analysis of multi-layer theory and material characteristic of polysilicon. The results show that a 3-?m-thick polysilicon film with 8-MPa overall residual tensile stress and 2.125-MPa/?m stress gradient through the film thickness is fabricated successfully.

© 2005 Chinese Optics Letters

OCIS Codes
(040.6040) Detectors : Silicon
(160.0160) Materials : Materials
(230.4170) Optical devices : Multilayers
(310.0310) Thin films : Thin films

Citation
Hongbin Yu, Haiqinq Chen, Jun Li, and Chao Wang, "An in situ growth method for property control of LPCVD polysilicon film," Chin. Opt. Lett. 2, 489-492 (2004)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-2-8-489

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