An in situ growth method for property control of LPCVD polysilicon film
Chinese Optics Letters, Vol. 2, Issue 8, pp. 489-492 (2004)
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Abstract
Polysilicon films deposited by low-pressure chemical vapor deposition (LPCVD) exhibit large residual stress and stress gradient, depending on the deposition condition. An in situ growth method based on multi-layer concept is presented to control the property for as-deposited polysilicon. A 3-?m-thick polysilicon film with nine layers structure is demonstrated under the detailed analysis of multi-layer theory and material characteristic of polysilicon. The results show that a 3-?m-thick polysilicon film with 8-MPa overall residual tensile stress and 2.125-MPa/?m stress gradient through the film thickness is fabricated successfully.
© 2005 Chinese Optics Letters
OCIS Codes
(040.6040) Detectors : Silicon
(160.0160) Materials : Materials
(230.4170) Optical devices : Multilayers
(310.0310) Thin films : Thin films
Citation
Hongbin Yu, Haiqinq Chen, Jun Li, and Chao Wang, "An in situ growth method for property control of LPCVD polysilicon film," Chin. Opt. Lett. 2, 489-492 (2004)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-2-8-489
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