OSA's Digital Library

Chinese Optics Letters

Chinese Optics Letters


  • Vol. 3, Iss. S1 — Aug. 28, 2005
  • pp: S198–S199

An investigation on capabilities of polarization control for immersion lithography through simulation

Guobin Yu, Tingwen Xing, and Hanmin Yao  »View Author Affiliations

Chinese Optics Letters, Vol. 3, Issue S1, pp. S198-S199 (2005)

View Full Text Article

Acrobat PDF (319 KB)

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

  • Export Citation/Save Click for help


The fundamental resolution limit and depth of focus of immersion lithography are described. The image contrasts for TE polarization, TM polarization, and unpolarized condition are explored in detail. There are complications associated with diffraction orders incident on the resist at large incident angles. Image contrast can be improved or degraded depending on the choice of polarization states. The influence of polarization on processing windows for 65 and 45 nm 1:1 line/space patterns is studied by simulation. It shows the use of vector image lithography simulator to quantify exposure-focus processing window improvements for TE polarization as compared with TM polarization. The results show that the full resolution capabilities of immersion lithography systems can only be realized when the polarization control is used.

© 2005 Chinese Optics Letters

OCIS Codes
(110.2960) Imaging systems : Image analysis
(110.3960) Imaging systems : Microlithography
(110.5220) Imaging systems : Photolithography
(260.5430) Physical optics : Polarization
(350.5730) Other areas of optics : Resolution

Guobin Yu, Tingwen Xing, and Hanmin Yao, "An investigation on capabilities of polarization control for immersion lithography through simulation," Chin. Opt. Lett. 3, S198-S199 (2005)

Sort:  Year  |  Journal  |  Reset


  1. http://public.itrs.net/Files/2001ITRS/Home.htm.
  2. C. V. Shank and R. V. Schmidt, Appl. Phys. Lett. 23, 154 (1974).
  3. H. Kawata, J. M. Carter, A. Yen, and H. I. Smith, Microelectron. Eng. 9, 31 (1989).
  4. J. A. Hoffnagle, W. D. Hinsberg, M. Sanchez, and F. A. Houle, J. Vac. Sci. Technol. B 17, 3306 (1999).
  5. B. W. Smith and J. Cashmore, Proc. SPIE 4691, 11 (2002).
  6. C. A. Mack, Proc. SPIE 5040, 151 (2003).
  7. F. M. Schellenberg, Proc. SPIE 5377, 1 (2004).
  8. B. J. Lin, Proc. SPIE 5377, 46 (2004).
  9. S. Owa, H. Nagasaka, Y. Ishii, O. Hirakawa, and T. Yamamoto, Proc. SPIE 5377, 264 (2004).

Cited By

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited