Influence of the strain on the energy levels of semiconductor quantum dots
Chinese Optics Letters, Vol. 3, Issue S1, pp. S244-S245 (2005)
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Abstract
We systematically investigate a strain of self-assembled InAs/GaAs quantum dots (QDs) for the case of growth on a (001) substrate. The dependence of the biaxial and hydrostatic components of the strain on the quantum dot aspect ratio is studied using a finite element method. The dependence of the carrier's confining potentials is then calculated in the framework of eight-band kp theory. The shifts of the energy level in three shapes of QDs are investigated. By comparing the results, the influence of the strain on the QDs are given.
© 2005 Chinese Optics Letters
OCIS Codes
(130.5990) Integrated optics : Semiconductors
(140.5960) Lasers and laser optics : Semiconductor lasers
(160.3380) Materials : Laser materials
(160.6000) Materials : Semiconductor materials
Citation
Hongbo Yang, Zhongyuan Yu, Yumin Liu, and Shiqi Zheng, "Influence of the strain on the energy levels of semiconductor quantum dots," Chin. Opt. Lett. 3, S244-S245 (2005)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-3-S1-S244
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