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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 3, Iss. S1 — Aug. 28, 2005
  • pp: S244–S245

Influence of the strain on the energy levels of semiconductor quantum dots

Hongbo Yang, Zhongyuan Yu, Yumin Liu, and Shiqi Zheng  »View Author Affiliations


Chinese Optics Letters, Vol. 3, Issue S1, pp. S244-S245 (2005)


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Abstract

We systematically investigate a strain of self-assembled InAs/GaAs quantum dots (QDs) for the case of growth on a (001) substrate. The dependence of the biaxial and hydrostatic components of the strain on the quantum dot aspect ratio is studied using a finite element method. The dependence of the carrier's confining potentials is then calculated in the framework of eight-band kp theory. The shifts of the energy level in three shapes of QDs are investigated. By comparing the results, the influence of the strain on the QDs are given.

© 2005 Chinese Optics Letters

OCIS Codes
(130.5990) Integrated optics : Semiconductors
(140.5960) Lasers and laser optics : Semiconductor lasers
(160.3380) Materials : Laser materials
(160.6000) Materials : Semiconductor materials

Citation
Hongbo Yang, Zhongyuan Yu, Yumin Liu, and Shiqi Zheng, "Influence of the strain on the energy levels of semiconductor quantum dots," Chin. Opt. Lett. 3, S244-S245 (2005)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-3-S1-S244

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