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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 3, Iss. S1 — Aug. 28, 2005
  • pp: S246–S247

Research of strain state and dislocation density in the multiple AlGaN epitaxial layers with high Al content

Da You, Qingxue Wang, and Haimei Gong  »View Author Affiliations


Chinese Optics Letters, Vol. 3, Issue S1, pp. S246-S247 (2005)


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Abstract

In this paper, the p-i-n multiple-layer Al_(x)Ga_(1-x)N sample with high Al (x>0.45) content was measured by the triple-axis X-ray diffraction measurement. The strain state and screw dislocation density of each layer in Al_(x)Ga_(1-x)N epitaxial layers were determined by RSM (reciprocal space map) method. Then, the PV function was used to fit the rock curves separated from the RSM. At last, the strain and the screw dislocation density of each layer were accurately calculated by fitting these rock curves.

© 2005 Chinese Optics Letters

OCIS Codes
(040.0040) Detectors : Detectors
(160.0160) Materials : Materials
(310.0310) Thin films : Thin films
(340.0340) X-ray optics : X-ray optics

Citation
Da You, Qingxue Wang, and Haimei Gong, "Research of strain state and dislocation density in the multiple AlGaN epitaxial layers with high Al content," Chin. Opt. Lett. 3, S246-S247 (2005)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-3-S1-S246


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