In this paper, we report a novel 1.3-?m uncooled AlGaInAs/InP multiple quantum well (MQW) ridge waveguide laser diodes. By optimizing the design of MQW structure and facet coatings, together with the application of reversed-mesa ridge waveguide (RM-RWG) structure, polyimide planarization, and lift-off processes technology, an uncooled 1.3-?m, 10-Gb/s directly modulated MQW ridge waveguide laser diode was successfully fabricated. The threshold current and the slope efficiency were 7 mA and 0.48 mW/mA, respectively. The directly modulated bandwidths of 11 and 9.2 GHz were achieved at room temperature and 80 Celsius degrees, respectively.
© 2005 Chinese Optics Letters
Dingli Wang, Ning Zhou, Jun Zhang, Yu Liu, Ninghua Zhu, and Linsong Li, "1.3-?m uncooled 10 Gb/s directly modulated MQW AlGaInAs/InP laser diodes," Chin. Opt. Lett. 3, 466-468 (2005)