1.3-?m uncooled 10 Gb/s directly modulated MQW AlGaInAs/InP laser diodes
Chinese Optics Letters, Vol. 3, Issue 8, pp. 466-468 (2005)
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Abstract
In this paper, we report a novel 1.3-?m uncooled AlGaInAs/InP multiple quantum well (MQW) ridge waveguide laser diodes. By optimizing the design of MQW structure and facet coatings, together with the application of reversed-mesa ridge waveguide (RM-RWG) structure, polyimide planarization, and lift-off processes technology, an uncooled 1.3-?m, 10-Gb/s directly modulated MQW ridge waveguide laser diode was successfully fabricated. The threshold current and the slope efficiency were 7 mA and 0.48 mW/mA, respectively. The directly modulated bandwidths of 11 and 9.2 GHz were achieved at room temperature and 80 Celsius degrees, respectively.
© 2005 Chinese Optics Letters
OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(250.0250) Optoelectronics : Optoelectronics
Citation
Dingli Wang, Ning Zhou, Jun Zhang, Yu Liu, Ninghua Zhu, and Linsong Li, "1.3-?m uncooled 10 Gb/s directly modulated MQW AlGaInAs/InP laser diodes," Chin. Opt. Lett. 3, 466-468 (2005)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-3-8-466
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