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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 3, Iss. 9 — Sep. 10, 2005
  • pp: 533–535

A novel coupled quantum well structure with large field-induced refractive index change and low absorption loss at 1.55 ?m

Zhixin Xu, Qiang Zhou, Xiaoqing Jiang, Xihua Li, Jianyi Yang, and Minghua Wang

Chinese Optics Letters, Vol. 3, Issue 9, pp. 533-535 (2005)


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Abstract

A novel coupled quantum well structure --- quasi-symmetric coupled quantum well (QSCQW) is proposed. In the case of low applied electric field (F = 25 kV/cm) and low absorption loss (? ~ 100 cm^(-1)), a large field-induced refractive index change (for TE mode, ?n = 0.0106; for TM mode, ?n = 0.0115) is obtained in QSCQW structure at operating wavelength ? = 1550 nm. The value is larger by over one to two order of magnitude compared to that in a rectangular quantum well (RQW) and about 50% larger than that of five-step asymmetric coupled quantum well (FACQW) structure under the above work conditions.

© 2005 Chinese Optics Letters

OCIS Codes
(160.4760) Materials : Optical properties
(160.6000) Materials : Semiconductor materials
(190.5970) Nonlinear optics : Semiconductor nonlinear optics including MQW

Citation
Zhixin Xu, Qiang Zhou, Xiaoqing Jiang, Xihua Li, Jianyi Yang, and Minghua Wang, "A novel coupled quantum well structure with large field-induced refractive index change and low absorption loss at 1.55 ?m," Chin. Opt. Lett. 3, 533-535 (2005)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-3-9-533

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