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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 3, Iss. S1 — Aug. 28, 2005
  • pp: S62–S64

Experimental study on the depth of electric field punching through into the absorption layer of APD

Changjun Liao, Hua Lv, Xiaodong Peng, Jianping Guo, Zhengjun Wei, Jinyun Zhou, Jinyuan Feng, and Songhao Liu  »View Author Affiliations


Chinese Optics Letters, Vol. 3, Issue S1, pp. S62-S64 (2005)


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Abstract

Dark-current-voltage curves and photon-current-voltage curves were measured by a passive quenched circuit so that the voltage applied to the avalanche photodiode can be much higher than breakdown voltage in study on the depth of punch through. The photo-current-voltage curve indicated clearly the punch-through voltage while the dark current-voltage curve is insensitive to the punch through. Furthermore, the avalanches initiated by the photo-generated carrier at a voltage lower than that from the thermo-generated carriers and explained based on the different distribution of the carriers.

© 2005 Chinese Optics Letters

OCIS Codes
(040.3060) Detectors : Infrared
(040.3780) Detectors : Low light level
(040.5160) Detectors : Photodetectors
(040.5570) Detectors : Quantum detectors
(230.5170) Optical devices : Photodiodes
(270.5290) Quantum optics : Photon statistics

Citation
Changjun Liao, Hua Lv, Xiaodong Peng, Jianping Guo, Zhengjun Wei, Jinyun Zhou, Jinyuan Feng, and Songhao Liu, "Experimental study on the depth of electric field punching through into the absorption layer of APD," Chin. Opt. Lett. 3, S62-S64 (2005)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-3-S1-S62


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