High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing
Chinese Optics Letters, Vol. 4, Issue 1, pp. 27-29 (2006)
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Abstract
The layer structure of GaInP/AlGaInP quantum well laser diodes (LDs) was grown on GaAs substrate using low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. In order to improve the catastrophic optical damage (COD) level of devices, a nonabsorbing window (NAW), which was based on Zn diffusion-induced quantum well intermixing, was fabricated near the both ends of the cavities. Zn diffusions were respectively carried out at 480, 500, 520, 540, and 580 Celsius degree for 20 minutes. The largest energy blue shift of 189.1 meV was observed in the window regions at 580 Celsius degree. When the blue shift was 24.7 meV at 480 Celsius degree, the COD power for the window LD was 86.7% higher than the conventional LD.
© 2005 Chinese Optics Letters
OCIS Codes
(140.2020) Lasers and laser optics : Diode lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.7300) Lasers and laser optics : Visible lasers
Citation
Kai Zheng, Tao Lin, Li Jiang, Jun Wang, Suping Liu, Xin Wei, Guangze Zhang, and Xiaoyu Ma, "High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing," Chin. Opt. Lett. 4, 27-29 (2006)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-4-1-27
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