Simulation of polarization-insensitive multiple-quantum-well superluminescent diodes
Chinese Optics Letters, Vol. 4, Issue 3, pp. 181-183 (2006)
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Abstract
The 1.3-um polarization-insensitive superluminescent diodes (SLDs) with weak tensile strained multiple-quantum-well (MQW) and complex strained MQW were demonstrated theoretically based on the simulation of energy band structure and gain spectra at different injected carrier densities. Compared with the weak tensile strained MQW, the complex strained MQW gets higher modal gain and better modal gain matching between TE and TM modes, and the polarization sensitivity of TE and TM optical spectra can remain less than 1.0 dB over a bandwidth of 200 nm.
© 2005 Chinese Optics Letters
OCIS Codes
(230.0230) Optical devices : Optical devices
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes
Citation
Han Zhao, Yidong Huang, Wei Zhang, and Jiangde Peng, "Simulation of polarization-insensitive multiple-quantum-well superluminescent diodes," Chin. Opt. Lett. 4, 181-183 (2006)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-4-3-181
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