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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 4, Iss. 4 — Apr. 1, 2006
  • pp: 237–239

Analysis of illumination pupil filling ellipticity for critical dimensions control in photolithography

Liping Guo, Xiangzhao Wang, and Huijie Huang  »View Author Affiliations


Chinese Optics Letters, Vol. 4, Issue 4, pp. 237-239 (2006)


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Abstract

Shrinking of critical dimensions (CDs) in semiconductor circuits has been pushing optical lithography to print features smaller than the wavelength of light source. The demand for CD control is ever-increasing. In this paper, the study is conducted to reveal the impact of illumination pupil filling ellipticity on CD uniformity. As main parameters of CD uniformity, horizontal-vertical feature bias (H-V bias) and isolated-dense feature bias (I-D bias) caused by pupil filling ellipticity are calculated using the PROLITH software under four different illumination settings. Simulation shows that H-V bias and I-D bias are proportional to the pupil filling ellipticity. The slopes of the fitting lines of the H-V bias versus pupil filling ellipticity are calculated.

© 2005 Chinese Optics Letters

OCIS Codes
(220.0220) Optical design and fabrication : Optical design and fabrication
(220.3740) Optical design and fabrication : Lithography

Citation
Liping Guo, Xiangzhao Wang, and Huijie Huang, "Analysis of illumination pupil filling ellipticity for critical dimensions control in photolithography," Chin. Opt. Lett. 4, 237-239 (2006)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-4-4-237

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