Porous silicon (PS) light-emitting diode (LED) with an ITO/PS/p-Si/Al structure was fabricated by anodic oxidation method. Photoluminescence (PL) of the PS LED was measured with a peak at 593 nm, and electroluminescence (EL) was measured with a peak at 556 nm under the conditions of 7.5-V forward bias and 210-mA current intensity. The spectral width of EL was measured to be about 160 nm.
© 2006 Chinese Optics Letters
Yajun Yang, Qingshan Li, and Xianyun Liu, "Study on electroluminescence from porous silicon light-emitting diode," Chin. Opt. Lett. 4, 297-298 (2006)