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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 4, Iss. 5 — May. 10, 2006
  • pp: 297–298

Study on electroluminescence from porous silicon light-emitting diode

Yajun Yang, Qingshan Li, and Xianyun Liu  »View Author Affiliations


Chinese Optics Letters, Vol. 4, Issue 5, pp. 297-298 (2006)


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Abstract

Porous silicon (PS) light-emitting diode (LED) with an ITO/PS/p-Si/Al structure was fabricated by anodic oxidation method. Photoluminescence (PL) of the PS LED was measured with a peak at 593 nm, and electroluminescence (EL) was measured with a peak at 556 nm under the conditions of 7.5-V forward bias and 210-mA current intensity. The spectral width of EL was measured to be about 160 nm.

© 2006 Chinese Optics Letters

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(250.5230) Optoelectronics : Photoluminescence
(310.6860) Thin films : Thin films, optical properties

Citation
Yajun Yang, Qingshan Li, and Xianyun Liu, "Study on electroluminescence from porous silicon light-emitting diode," Chin. Opt. Lett. 4, 297-298 (2006)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-4-5-297


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