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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 4, Iss. 6 — Jun. 10, 2006
  • pp: 351–352

A novel coupled quantum well structure and its excellent electro-optical properties

Ming Li and Zhixin Xu  »View Author Affiliations


Chinese Optics Letters, Vol. 4, Issue 6, pp. 351-352 (2006)


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Abstract

A novel InGaAs/InAlAs coupled quantum well structure is proposed for large field-induced refractive index change with low absorption loss. In the case of low applied electric field of 15 kV/cm and low absorption loss ('alpha' <= 100 cm^(-1)), a large field-induced refractive index change (for transverse electric (TE) mode, 'Delta' n = 0.012; for transverse magnetic (TM) mode, 'Delta' n = 0.0126) is obtained in the structure at the operation wavelength of 1.55 um. The value is larger by over one order of magnitude than that in a rectangular quantum well. The result is very attractive for semiconductor optical switching devices.

© 2006 Chinese Optics Letters

OCIS Codes
(160.4760) Materials : Optical properties
(160.6000) Materials : Semiconductor materials
(190.5970) Nonlinear optics : Semiconductor nonlinear optics including MQW
(230.0230) Optical devices : Optical devices

Citation
Ming Li and Zhixin Xu, "A novel coupled quantum well structure and its excellent electro-optical properties," Chin. Opt. Lett. 4, 351-352 (2006)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-4-6-351


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