A novel InGaAs/InAlAs coupled quantum well structure is proposed for large field-induced refractive index change with low absorption loss. In the case of low applied electric field of 15 kV/cm and low absorption loss ('alpha' <= 100 cm^(-1)), a large field-induced refractive index change (for transverse electric (TE) mode, 'Delta' n = 0.012; for transverse magnetic (TM) mode, 'Delta' n = 0.0126) is obtained in the structure at the operation wavelength of 1.55 um. The value is larger by over one order of magnitude than that in a rectangular quantum well. The result is very attractive for semiconductor optical switching devices.
© 2006 Chinese Optics Letters
(160.4760) Materials : Optical properties
(160.6000) Materials : Semiconductor materials
(190.5970) Nonlinear optics : Semiconductor nonlinear optics including MQW
(230.0230) Optical devices : Optical devices
Ming Li and Zhixin Xu, "A novel coupled quantum well structure and its excellent electro-optical properties," Chin. Opt. Lett. 4, 351-352 (2006)