Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power
Chinese Optics Letters, Vol. 4, Issue 7, pp. 413-415 (2006)
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Abstract
Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots (QDs) embedded within strained InGaAs quantum wells as an active region is demonstrated. At room temperature, 355-mW output power at ground state of 1.33-1.35 microns for a 20-micron ridge-waveguide laser without facet coating is achieved. By optimizing the molecular beam epitaxy (MBE) growth conditions, the QD density per layer is raised to 4*10^(10) cm^(-2). The laser keeps lasing at ground state until the temperature reaches 65 Celsius degree.
© 2006 Chinese Optics Letters
OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(160.6000) Materials : Semiconductor materials
Citation
Qin Han, Zhichuan Niu, Haiqiao Ni, Shiyong Zhang, Xiaohong Yang, Yun Du, Cunzhu Tong, Huan Zhao, Yingqiang Xu, Hongling Peng, and Ronghan Wu, "Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power," Chin. Opt. Lett. 4, 413-415 (2006)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-4-7-413
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