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Chinese Optics Letters

Chinese Optics Letters


  • Vol. 4, Iss. 7 — Jul. 10, 2006
  • pp: 416–418

Integration of GaN thin films with silicon substrates by fusion bonding and laser lift-off

Ting Wang, Xia Guo, Yuan Fang, Bin Liu, and Guangdi Shen  »View Author Affiliations

Chinese Optics Letters, Vol. 4, Issue 7, pp. 416-418 (2006)

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GaN thin films grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) are successfully bonded and transferred onto Si receptor substrates using fusion bonding and laser lift-off (LLO) technique. GaN/Al2O3 structures are joined to Si substrates by pressure bonding Ti/Au coated GaN surface onto Ti/Au coated Si receptor substrates at the temperature of 400 Celsius degree. KrF excimer laser with 400-mJ/cm2 energy density, 248-nm wavelength, and 30-ns pulse width is used to irradiate the wafer through the transparent sapphire substrates and separate GaN films from sapphire. Cross-section scanning electron microscopy (SEM) combined with energy dispersive X-ray spectrometer (EDS) measurements show that Au/Si solid solution is formed during bonding process. Atomic force microscopy (AFM) and photoluminescence (PL) measurements show that the qualities of GaN films on Si substrates degrade little after substrates transfer.

© 2006 Chinese Optics Letters

OCIS Codes
(140.3390) Lasers and laser optics : Laser materials processing
(230.3670) Optical devices : Light-emitting diodes

Ting Wang, Xia Guo, Yuan Fang, Bin Liu, and Guangdi Shen, "Integration of GaN thin films with silicon substrates by fusion bonding and laser lift-off," Chin. Opt. Lett. 4, 416-418 (2006)

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