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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 5, Iss. 10 — Oct. 10, 2007
  • pp: 585–587

High performance 1689-nm quantum well diode lasers

Yupeng Duan, Tao Lin, Cuiluan Wang, Feng Chong, and Xiaoyu Ma  »View Author Affiliations


Chinese Optics Letters, Vol. 5, Issue 10, pp. 585-587 (2007)


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Abstract

1689-nm diode lasers used in medical apparatus have been fabricated and characterized. The lasers had pnpn InP current confinement structure, and the active region consisted of 5 pairs of InGaAs quantum wells and InGaAsP barriers. Stripe width and cavity length of the laser were 1.8 and 300 microns, respectively. After being cavity coated and transistor outline (TO) packaged, the lasers showed high performance in practice. The threshold current was about 13+-4 mA, the operation current and the lasing spectrum were about 58+-6 mA and 1689+-6 nm at 6-mW output power, respectively. Moreover, the maximum output power of the lasers was above 20 mW.

© 2007 Chinese Optics Letters

OCIS Codes
(140.2020) Lasers and laser optics : Diode lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(160.6000) Materials : Semiconductor materials
(260.3060) Physical optics : Infrared

Citation
Yupeng Duan, Tao Lin, Cuiluan Wang, Feng Chong, and Xiaoyu Ma, "High performance 1689-nm quantum well diode lasers," Chin. Opt. Lett. 5, 585-587 (2007)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-5-10-585


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