Optimization of gallium nitride-based laser diode through transverse modes analysis
Chinese Optics Letters, Vol. 5, Issue 10, pp. 588-590 (2007)
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Abstract
We investigate the transverse mode pattern in GaN quantum-well (QW) laser diode (LD) by numerical calculation. We optimize the current GaN LD structure by varying the n-GaN layer thickness. The n-type GaN layer is an important factor to determine the optical mode. Finally, we discuss the lasing performance of the GaN LD based on the transverse optical modes.
© 2007 Chinese Optics Letters
OCIS Codes
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.5960) Lasers and laser optics : Semiconductor lasers
(220.0220) Optical design and fabrication : Optical design and fabrication
Citation
Xiaomin Jin, Bei Zhang, Liang Chen, Tao Dai, and Guoyi Zhang, "Optimization of gallium nitride-based laser diode through transverse modes analysis," Chin. Opt. Lett. 5, 588-590 (2007)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-5-10-588
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