Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Chinese Optics Letters
  • Vol. 5,
  • Issue 10,
  • pp. 601-601
  • (2007)

A CO2 laser rapid-thermal-annealing SiOx based metal-oxide-semiconductor light emitting diode

Not Accessible

Your library or personal account may give you access

Abstract

Enhanced near-infrared (NIR) electroluminescence (EL) of a metal-oxide-semiconductor light emitting device (MOSLED) made on CO2 laser-annealed SiOx film is demonstrated. An EL power of near 50 nW from CO2 laser rapid-thermal-annealing (RTA) MOSLED under a biased voltage of 85 V and a current density of 2.3 mA/cm2 is preliminarily reported.

© 2007 Chinese Optics Letters

PDF Article
More Like This
Enhanced Fowler-Nordheim tunneling effect in nanocrystallite Si based LED with interfacial Si nano-pyramids

Gong-Ru Lin, Chun-Jung Lin, and Chi-Kuan Lin
Opt. Express 15(5) 2555-2563 (2007)

Mutlicolor electroluminescent Si quantum dots embedded in SiOx thin film MOSLED with 2.4% external quantum efficiency

Chih-Hsien Cheng, Yu-Chung Lien, Chung-Lun Wu, and Gong-Ru Lin
Opt. Express 21(1) 391-403 (2013)

­Electroluminescent wavelength shift of Si-rich SiOx based blue and green MOSLEDs induced by O/Si composition Si-QD size variations

Bo-Han Lai, Chih-Hsien Cheng, and Gong-Ru Lin
Opt. Mater. Express 3(2) 166-175 (2013)

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved