A CO2 laser rapid-thermal-annealing SiOx based metal-oxide-semiconductor light emitting diode
Chinese Optics Letters, Vol. 5, Issue 10, pp. 601-601 (2007)
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Abstract
Enhanced near-infrared (NIR) electroluminescence (EL) of a metal-oxide-semiconductor light emitting device (MOSLED) made on CO2 laser-annealed SiOx film is demonstrated. An EL power of near 50 nW from CO2 laser rapid-thermal-annealing (RTA) MOSLED under a biased voltage of 85 V and a current density of 2.3 mA/cm2 is preliminarily reported.
© 2007 Chinese Optics Letters
OCIS Codes
(160.2540) Materials : Fluorescent and luminescent materials
(250.5230) Optoelectronics : Photoluminescence
Citation
Chun-Jung Lin and Gong-Ru Lin, "A CO2 laser rapid-thermal-annealing SiOx based metal-oxide-semiconductor light emitting diode," Chin. Opt. Lett. 5, 601-601 (2007)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-5-10-601
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