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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 5, Iss. 10 — Oct. 10, 2007
  • pp: 601–601

A CO2 laser rapid-thermal-annealing SiOx based metal-oxide-semiconductor light emitting diode

Chun-Jung Lin and Gong-Ru Lin  »View Author Affiliations


Chinese Optics Letters, Vol. 5, Issue 10, pp. 601-601 (2007)


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Abstract

Enhanced near-infrared (NIR) electroluminescence (EL) of a metal-oxide-semiconductor light emitting device (MOSLED) made on CO2 laser-annealed SiOx film is demonstrated. An EL power of near 50 nW from CO2 laser rapid-thermal-annealing (RTA) MOSLED under a biased voltage of 85 V and a current density of 2.3 mA/cm2 is preliminarily reported.

© 2007 Chinese Optics Letters

OCIS Codes
(160.2540) Materials : Fluorescent and luminescent materials
(250.5230) Optoelectronics : Photoluminescence

Citation
Chun-Jung Lin and Gong-Ru Lin, "A CO2 laser rapid-thermal-annealing SiOx based metal-oxide-semiconductor light emitting diode," Chin. Opt. Lett. 5, 601-601 (2007)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-5-10-601


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References

  1. L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzo, and F. Priolo, Nature 408, 440 (2000).
  2. C.-J. Lin and G.-R. Lin, IEEE J. Quantum Electron. 41, 441 (2005).

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