Abstract

The correlation between the gain material and the factors affecting characteristic temperature in high-power semiconductor lasers is comprehensively considered, and the AlInGaAs is adopted as the active area material. The AlInGaAs/AlGaAs/GaAs strained quantum well laser is designed and the whole structure of the device is given. Its highest operation temperature is 100 Celsius degrees and the characteristic temperature is up to about 200 K when the temperature is within 20-40 Celsius degrees. The output power is over 1 W at room temperature, and the lowest threshold current density is 126 A/cm2.

© 2007 Chinese Optics Letters

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