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Optica Publishing Group
  • Chinese Optics Letters
  • Vol. 5,
  • Issue S1,
  • pp. S154-S155
  • (2007)

1050-nm high power diode array module

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Abstract

High power diode array module has been fabricated. The epitaxial structure is an InGaAs/GaAsP strain compensated single quantum well. The laser bars are made with a filling factor of 84.6%. The module's quasi-continuous wave (100 microseconds, 1000 Hz) peak power can reach to 88.6 W at a current of 100 A. The central wavelength is 1050 nm and the full width at half maximum is 4.2 nm.

© 2007 Chinese Optics Letters

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