1050-nm high power diode array module
Chinese Optics Letters, Vol. 5, Issue S1, pp. S154-S155 (2007)
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Abstract
High power diode array module has been fabricated. The epitaxial structure is an InGaAs/GaAsP strain compensated single quantum well. The laser bars are made with a filling factor of 84.6%. The module's quasi-continuous wave (100 microseconds, 1000 Hz) peak power can reach to 88.6 W at a current of 100 A. The central wavelength is 1050 nm and the full width at half maximum is 4.2 nm.
© 2007 Chinese Optics Letters
OCIS Codes
(040.1240) Detectors : Arrays
(140.3290) Lasers and laser optics : Laser arrays
(140.5960) Lasers and laser optics : Semiconductor lasers
(310.1620) Thin films : Interference coatings
Citation
Getao Tao, Shun Yao, Guoguang Lu, Yun Liu, Di Yao, and Lijun Wang, "1050-nm high power diode array module," Chin. Opt. Lett. 5, S154-S155 (2007)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-5-S1-S154
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