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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 5, Iss. 11 — Nov. 10, 2007
  • pp: 671–673

Enhanced electroluminescence from nanocrystallite Si based MOSLED by interfacial Si nanopyramids

Gong-Ru Lin  »View Author Affiliations


Chinese Optics Letters, Vol. 5, Issue 11, pp. 671-673 (2007)


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Abstract

The interfacial Si nano-pyramid-enhanced electroluminescence (EL) of an ITO/SiOx/p-Si/Al metal-oxide-semiconductor (MOS) diode with turn-on voltage of 50 V, threshold current of 1.23 mA/cm2, output power of 16 nW, and lifetime of 10 h is reported.

© 2007 Chinese Optics Letters

OCIS Codes
(160.2540) Materials : Fluorescent and luminescent materials
(250.5230) Optoelectronics : Photoluminescence

Citation
Gong-Ru Lin, "Enhanced electroluminescence from nanocrystallite Si based MOSLED by interfacial Si nanopyramids," Chin. Opt. Lett. 5, 671-673 (2007)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-5-11-671


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References

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  2. L. Pavesi, L. D. Negro, C. Mazzoleni, G. Franzo, and F. Priolo, Nature 408, 440 (2000).
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