Enhanced electroluminescence from nanocrystallite Si based MOSLED by interfacial Si nanopyramids
Chinese Optics Letters, Vol. 5, Issue 11, pp. 671-673 (2007)
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Abstract
The interfacial Si nano-pyramid-enhanced electroluminescence (EL) of an ITO/SiOx/p-Si/Al metal-oxide-semiconductor (MOS) diode with turn-on voltage of 50 V, threshold current of 1.23 mA/cm2, output power of 16 nW, and lifetime of 10 h is reported.
© 2007 Chinese Optics Letters
OCIS Codes
(160.2540) Materials : Fluorescent and luminescent materials
(250.5230) Optoelectronics : Photoluminescence
Citation
Gong-Ru Lin, "Enhanced electroluminescence from nanocrystallite Si based MOSLED by interfacial Si nanopyramids," Chin. Opt. Lett. 5, 671-673 (2007)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-5-11-671
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