The interfacial Si nano-pyramid-enhanced electroluminescence (EL) of an ITO/SiOx/p-Si/Al metal-oxide-semiconductor (MOS) diode with turn-on voltage of 50 V, threshold current of 1.23 mA/cm2, output power of 16 nW, and lifetime of 10 h is reported.
© 2007 Chinese Optics Letters
Gong-Ru Lin, "Enhanced electroluminescence from nanocrystallite Si based MOSLED by interfacial Si nanopyramids," Chin. Opt. Lett. 5, 671-673 (2007)