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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 5, Iss. 12 — Dec. 10, 2007
  • pp: 727–729

Laser-induced damage threshold in n-on-1 regime of Ta2O5 films at 532, 800, and 1064 nm

Cheng Xu, Jianke Yao, Jianyong Ma, Yunxia Jin, and Jianda Shao  »View Author Affiliations


Chinese Optics Letters, Vol. 5, Issue 12, pp. 727-729 (2007)


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Abstract

Ta2O5 films were prepared with conventional electron beam evaporation and annealed in O2 at 673 K for 12 h. Laser-induced damage thresholds (LIDTs) of the films were performed at 532 and 1064 nm in 1-on-1 regime firstly, and then were performed at 532, 800, and 1064 nm in n-on-1 regime, respectively. The results showed that the LIDTs in n-on-1 regime were higher than that in 1-on-1 regime at 532 and 1064 nm. In addition, in n-on-1 regime, the LIDT increased with the increase of wavelength. Furthermore, both the optical property and LIDT of Ta2O5 films were influenced by annealing in O2.

© 2007 Chinese Optics Letters

OCIS Codes
(140.3330) Lasers and laser optics : Laser damage
(160.3380) Materials : Laser materials
(310.6860) Thin films : Thin films, optical properties

Citation
Cheng Xu, Jianke Yao, Jianyong Ma, Yunxia Jin, and Jianda Shao, "Laser-induced damage threshold in n-on-1 regime of Ta2O5 films at 532, 800, and 1064 nm," Chin. Opt. Lett. 5, 727-729 (2007)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-5-12-727

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