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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 6, Iss. 10 — Oct. 1, 2008
  • pp: 727–731

Quantum dot lasers and integrated optoelectronics on silicon platform Invited Paper

Jun Yang, Pallab Bhattacharya, Zetian Mi, Guoxuan Qin, and Zhenqiang Ma  »View Author Affiliations


Chinese Optics Letters, Vol. 6, Issue 10, pp. 727-731 (2008)


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Abstract

Chip-scale integration of optoelectronic devices such as lasers, waveguides, and modulators on silicon is prevailing as a promising approach to realize future ultrahigh speed optical interconnects. We review recent progress of the direct epitaxy and fabrication of quantum dot (QD) lasers and integrated guided-wave devices on silicon. This approach involves the development of molecular beam epitaxial growth of self-organized QD lasers directly on silicon substrates and their monolithic integration with amorphous silicon waveguides and quantum well electroabsorption modulators. Additionally, we report a preliminary study of long-wavelength (>1.3 µm) Q D lasers grown on silicon and integrated crystalline silicon waveguides using membrane transfer technology.

© 2008 Chinese Optics Letters

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(250.3140) Optoelectronics : Integrated optoelectronic circuits

Citation
Jun Yang, Pallab Bhattacharya, Zetian Mi, Guoxuan Qin, and Zhenqiang Ma, "Quantum dot lasers and integrated optoelectronics on silicon platform Invited Paper," Chin. Opt. Lett. 6, 727-731 (2008)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-6-10-727


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