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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 6, Iss. 10 — Oct. 1, 2008
  • pp: 773–775

Enhanced laser induced damage threshold of dielectric antireflection coatings by the introduction of one interfacial layer

Congjuan Wang, Zhaoxia Han, Yunxia Jin, Jianda Shao, and Zhengxiu Fan  »View Author Affiliations


Chinese Optics Letters, Vol. 6, Issue 10, pp. 773-775 (2008)


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Abstract

A new method for increasing laser induced damage threshold (LIDT) of dielectric antireflection (AR) coating is proposed. Compared with AR film stack of H2.5L (H:HfO2, L:SiO2 on BK7 substrate, SiO2 interfacial layer with four quarter wavelength optical thickness (QWOT) is deposited on the substrate before the preparation of H2.5L film. It is found that the introduction of SiO2 interfacial layer with a certain thickness is effective and flexible to increase the LIDT of dielectric AR coatings. The measured LIDT is enhanced by about 50%, while remaining the low reflectivity with less than 0.09% at the center wavelength of 1064 nm. Detailed mechanisms of the LIDT enhancement are discussed.

© 2008 Chinese Optics Letters

OCIS Codes
(140.3330) Lasers and laser optics : Laser damage
(310.1210) Thin films : Antireflection coatings

Citation
Congjuan Wang, Zhaoxia Han, Yunxia Jin, Jianda Shao, and Zhengxiu Fan, "Enhanced laser induced damage threshold of dielectric antireflection coatings by the introduction of one interfacial layer," Chin. Opt. Lett. 6, 773-775 (2008)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-6-10-773

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