OSA's Digital Library

Chinese Optics Letters

Chinese Optics Letters


  • Vol. 6, Iss. 2 — Feb. 1, 2008
  • pp: 152–153

GaInN light-emitting diodes with omni-directional reflector using nanoporous SnO2 film

Changyu Shen, Huajun Feng, Zhihai Xu, and Shangzhong Jin  »View Author Affiliations

Chinese Optics Letters, Vol. 6, Issue 2, pp. 152-153 (2008)

View Full Text Article

Acrobat PDF (245 KB)

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

  • Export Citation/Save Click for help


Enhancement of light extraction in a GaInN light-emitting diode (LED) employing an omni-directional reflector (ODR) consisting of GaN, SnO2 nanorod and an Ag layer was presented. The ODR comprises a transparent, quarterwave layer of SnO2 nanorod claded by silver and serves as an ohmic contact to p-type GaN. Transparent SnO2 sols were obtained by sol-gel method from SnCl 2H2O, and SnO2 thin films were prepared by dip-coating technique. The average size of the spherical SnO2 particles obtained is 200 nm. The refractive index of the nanorod SnO2 film layer is 2.01. The GaInN LEDs with GaN/SnO2/Ag ODR show a lower forward voltage. This was attributed to the enhanced reflectivity of the ODR that employs the nanorod SnO2 film layer. Experimental results show that ODR-LEDs have lower optical losses and higher extraction efficiency as compared to conventional LEDs with Ni/Au contacts and conventional LEDs employing a distributed Bragg reflector (DBR).

© 2008 Chinese Optics Letters

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(310.6860) Thin films : Thin films, optical properties

Changyu Shen, Huajun Feng, Zhihai Xu, and Shangzhong Jin, "GaInN light-emitting diodes with omni-directional reflector using nanoporous SnO2 film," Chin. Opt. Lett. 6, 152-153 (2008)

Sort:  Year  |  Journal  |  Reset


  1. J. K. Kim, T. Gessmann, and E. F. Schubert, Appl. Phys. Lett. 88, 013501 (2006).
  2. D. Kim, H. Lee, N. Cho, Y. Sung, and G. Yeom, Jpn. J. Appl. Phys. 44, L18 (2005).
  3. T.-X. Lee, C.-Y. Lin, S.-H. Ma, and C.-C. Sun, Opt. Express 13, 4715 (2005).
  4. N. Li, E.-H. Park, Y. Huang, S. Wang, A. Valencia, B. Nemeth, J. Nause, and I. Ferguson, Proc. SPIE 6337, 63370Z (2006).
  5. T. Gessmann and E. F. Schubert, J. Appl. Phys. 95, 51 (2004).
  6. J.-Q. Xi, M. Ojha, W. Cho, C. Wetzel, T. Gessmann, E. F. Schubert, J. L. Plawsky, and W. H. Gill, in Proceedings of CLEO 2005 144 (2005).
  7. T. Gessmann, Y.-L. Li, E. F. Schubert, J. W. Graff, and J. K. Sheu, Proc. SPIE 4996, 139 (2003).
  8. T. Gessmann, E. F. Schubert, J. W. Graff, K. Streubel, and C. Karnutsch, IEEE Electron. Device Lett. 24, 683 (2003).
  9. J.-Q. Xi, J. K. Kim, and E. F. Schubert, Nano Lett. 5, 1385 (2005).

Cited By

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited