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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 6, Iss. 2 — Feb. 1, 2008
  • pp: 152–153

GaInN light-emitting diodes with omni-directional reflector using nanoporous SnO2 film

Changyu Shen, Huajun Feng, Zhihai Xu, and Shangzhong Jin  »View Author Affiliations


Chinese Optics Letters, Vol. 6, Issue 2, pp. 152-153 (2008)


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Abstract

Enhancement of light extraction in a GaInN light-emitting diode (LED) employing an omni-directional reflector (ODR) consisting of GaN, SnO2 nanorod and an Ag layer was presented. The ODR comprises a transparent, quarterwave layer of SnO2 nanorod claded by silver and serves as an ohmic contact to p-type GaN. Transparent SnO2 sols were obtained by sol-gel method from SnCl 2H2O, and SnO2 thin films were prepared by dip-coating technique. The average size of the spherical SnO2 particles obtained is 200 nm. The refractive index of the nanorod SnO2 film layer is 2.01. The GaInN LEDs with GaN/SnO2/Ag ODR show a lower forward voltage. This was attributed to the enhanced reflectivity of the ODR that employs the nanorod SnO2 film layer. Experimental results show that ODR-LEDs have lower optical losses and higher extraction efficiency as compared to conventional LEDs with Ni/Au contacts and conventional LEDs employing a distributed Bragg reflector (DBR).

© 2008 Chinese Optics Letters

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(310.6860) Thin films : Thin films, optical properties

Citation
Changyu Shen, Huajun Feng, Zhihai Xu, and Shangzhong Jin, "GaInN light-emitting diodes with omni-directional reflector using nanoporous SnO2 film," Chin. Opt. Lett. 6, 152-153 (2008)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-6-2-152


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