The 810-nm InGaAlAs/AlGaAs double quantum well (QW) semiconductor lasers with asymmetric waveguide structures, grown by molecular beam epitaxy, show high quantum efficiency and high-power conversion efficiency at continuous-wave (CW) power output. The threshold current density and slope efficiency of the device are 180 A/cm^2 and 1.3 W/A, respectively. The internal loss and the internal quantum efficiency are 1.7 cm^(-1) and 93%, respectively. The 70% maximum power conversion efficiency is achieved with narrow far-field patterns.
© 2008 Chinese Optics Letters
Lin Li, Guojun Liu, Zhanguo Li, Mei Li, Xiaohua Wang, Hui Li, and and Chunming Wan, "810-nm InGaAlAs/AlGaAs double quantum well semiconductor lasers with asymmetric waveguide structures," Chin. Opt. Lett. 6, 268-270 (2008)