Abstract

The 810-nm InGaAlAs/AlGaAs double quantum well (QW) semiconductor lasers with asymmetric waveguide structures, grown by molecular beam epitaxy, show high quantum efficiency and high-power conversion efficiency at continuous-wave (CW) power output. The threshold current density and slope efficiency of the device are 180 A/cm^2 and 1.3 W/A, respectively. The internal loss and the internal quantum efficiency are 1.7 cm^(-1) and 93%, respectively. The 70% maximum power conversion efficiency is achieved with narrow far-field patterns.

© 2008 Chinese Optics Letters

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