810-nm InGaAlAs/AlGaAs double quantum well semiconductor lasers with asymmetric waveguide structures
Chinese Optics Letters, Vol. 6, Issue 4, pp. 268-270 (2008)
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Abstract
The 810-nm InGaAlAs/AlGaAs double quantum well (QW) semiconductor lasers with asymmetric waveguide structures, grown by molecular beam epitaxy, show high quantum efficiency and high-power conversion efficiency at continuous-wave (CW) power output. The threshold current density and slope efficiency of the device are 180 A/cm^2 and 1.3 W/A, respectively. The internal loss and the internal quantum efficiency are 1.7 cm^(-1) and 93%, respectively. The 70% maximum power conversion efficiency is achieved with narrow far-field patterns.
© 2008 Chinese Optics Letters
OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(310.1860) Thin films : Deposition and fabrication
Citation
Lin Li, Guojun Liu, Zhanguo Li, Mei Li, Xiaohua Wang, Hui Li, and and Chunming Wan, "810-nm InGaAlAs/AlGaAs double quantum well semiconductor lasers with asymmetric waveguide structures," Chin. Opt. Lett. 6, 268-270 (2008)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-6-4-268
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