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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 6, Iss. 4 — Apr. 1, 2008
  • pp: 282–285

Study on nitridation processes of beta-Ga2O3 single crystal

Xing Li, Changtai Xia, Xiaoli He, Guangqing Pei, Jungang Zhang, and Jun Xu  »View Author Affiliations


Chinese Optics Letters, Vol. 6, Issue 4, pp. 282-285 (2008)


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Abstract

Nitridated beta-Ga2O3 (100) substrate was investigated as the substrate for GaN epitaxial growth. The effects of nitridation temperature and surface roughness of beta-Ga2O3 wafers on the formation of GaN were studied. It was found that the most optimized nitridation temperature was 900 centigrade, and hexagonal GaN with preferred orientation was produced on the well-polished wafer. The nitridation mechanism was also discussed.

© 2008 Chinese Optics Letters

OCIS Codes
(240.6700) Optics at surfaces : Surfaces
(250.0250) Optoelectronics : Optoelectronics
(250.5230) Optoelectronics : Photoluminescence
(290.5860) Scattering : Scattering, Raman
(350.3850) Other areas of optics : Materials processing

Citation
Xing Li, Changtai Xia, Xiaoli He, Guangqing Pei, Jungang Zhang, and Jun Xu, "Study on nitridation processes of beta-Ga2O3 single crystal," Chin. Opt. Lett. 6, 282-285 (2008)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-6-4-282

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