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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 6, Iss. 9 — Sep. 1, 2008
  • pp: 689–692

Impact of propagation effects on intersubband Rabi flopping in semiconductor quantum wells

Xusheng Zhou, Ni Cui, Jifeng Zu, and Shangqing Gong  »View Author Affiliations


Chinese Optics Letters, Vol. 6, Issue 9, pp. 689-692 (2008)


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Abstract

We investigate intersubband Rabi flopping in modulation-doped semiconductor quantum wells with and without the propagation effects, respectively. It is shown that propagation effects have a larger impact on Rabi flopping than the nonlinearities rooted from electron-electron interactions in multiple quantum wells. By using ultrashort \pi pulses, an almost complete population inversion exists if the propagation effects are not considered; while no complete population inversion occurs in the presence of propagation effects. Furthermore, the magnitude of the impact of propagation effects may be controlled by varying the carrier density.

© 2008 Chinese Optics Letters

OCIS Codes
(040.4200) Detectors : Multiple quantum well
(140.0140) Lasers and laser optics : Lasers and laser optics
(190.0190) Nonlinear optics : Nonlinear optics
(320.0320) Ultrafast optics : Ultrafast optics

Citation
Xusheng Zhou, Ni Cui, Jifeng Zu, and Shangqing Gong, "Impact of propagation effects on intersubband Rabi flopping in semiconductor quantum wells," Chin. Opt. Lett. 6, 689-692 (2008)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-6-9-689

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