Impact of propagation effects on intersubband Rabi flopping in semiconductor quantum wells
Chinese Optics Letters, Vol. 6, Issue 9, pp. 689-692 (2008)
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Abstract
We investigate intersubband Rabi flopping in modulation-doped semiconductor quantum wells with and without the propagation effects, respectively. It is shown that propagation effects have a larger impact on Rabi flopping than the nonlinearities rooted from electron-electron interactions in multiple quantum wells. By using ultrashort \pi pulses, an almost complete population inversion exists if the propagation effects are not considered; while no complete population inversion occurs in the presence of propagation effects. Furthermore, the magnitude of the impact of propagation effects may be controlled by varying the carrier density.
© 2008 Chinese Optics Letters
OCIS Codes
(040.4200) Detectors : Multiple quantum well
(140.0140) Lasers and laser optics : Lasers and laser optics
(190.0190) Nonlinear optics : Nonlinear optics
(320.0320) Ultrafast optics : Ultrafast optics
Citation
Xusheng Zhou, Ni Cui, Jifeng Zu, and Shangqing Gong, "Impact of propagation effects on intersubband Rabi flopping in semiconductor quantum wells," Chin. Opt. Lett. 6, 689-692 (2008)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-6-9-689
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