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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 7, Iss. 10 — Oct. 1, 2009
  • pp: 882–885

Electronic structure of GaAs/AlGaAs quantum double rings in lateral electric field

Y. Yao, T. Ochiai, T. Mano, T. Kuroda, T. Noda, N. Koguchi, and K. Sakoda  »View Author Affiliations


Chinese Optics Letters, Vol. 7, Issue 10, pp. 882-885 (2009)


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Abstract

A three-dimensional model of GaAs/AlGaAs quantum double rings in the lateral static electric field is investigated theoretically. The eigenvalue problem with the effective-mass approximation is solved by means of the finite-element method. The energy levels and wave functions of quantum-confined electrons and heavy holes are obtained and show an agreement with our previous theoretical and experimental studies. It is shown in the approximation of neglecting the Coulomb attraction between the electron and heavy hole that a relatively large Stark shift of exciton emission of 4 meV is attainable with an applied electric field of 0.7 kV/cm.

© 2009 Chinese Optics Letters

OCIS Codes
(160.6000) Materials : Semiconductor materials
(260.6580) Physical optics : Stark effect
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

Citation
Y. Yao, T. Ochiai, T. Mano, T. Kuroda, T. Noda, N. Koguchi, and K. Sakoda, "Electronic structure of GaAs/AlGaAs quantum double rings in lateral electric field," Chin. Opt. Lett. 7, 882-885 (2009)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-7-10-882

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