Light extraction of GaN LEDs with 2-D photonic crystal structure
Chinese Optics Letters, Vol. 7, Issue 10, pp. 918-920 (2009)
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Abstract
Ultraviolet photo-lithography is employed to introduce two-dimensional (2D) photonic crystal (PC) structure on the top surface of GaN-based light emitting diode (LED). PC patterns are transferred to 460-nm-thick transparent indium tin oxide (ITO) electrode by inductively coupled plasma (ICP) etching. Light intensity of PC-LED can be enhanced by 38% comparing with the one without PC structure. Rigorous coupled wave analysis method is performed to calculate the light transmission spectrum of PC slab. Simulation results indicate that total internal reflect angle which modulated by PC structure has been increased by 7, which means that the light extraction efficiency is enhanced outstandingly.
© 2009 Chinese Optics Letters
OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(230.4000) Optical devices : Microstructure fabrication
(230.5298) Optical devices : Photonic crystals
Citation
Hongwei Liu, Qiang Kan, Chunxia Wang, Feng Yu, Xingsheng Xu, and Hongda Chen, "Light extraction of GaN LEDs with 2-D photonic crystal structure," Chin. Opt. Lett. 7, 918-920 (2009)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-7-10-918
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